Towards bifacial silicon heterojunction solar cells with reduced TCO use

Reducing indium consumption, which is related to the transparent conductive oxide (TCO) use, a key challenge for scaling up silicon heterojunction (SHJ) solar cell technology terawatt level. In this work, we developed bifacial SHJ cells with reduced TCO thickness. We present three types of In2O3-based TCOs, tin-, fluorine-, and tungsten-doped In2O3 (ITO, IFO, IWO), whose thickness has been optimally minimized. These are promising respectively, from post-transition metal doping, anionic transition doping exhibit different opto-electrical properties. performed optical simulations electrical investigations varied thicknesses. The results indicate that (i) reducing could yield larger current in both monofacial devices; (ii) our IWO IFO favorable n-contact p-contact, respectively; (iii) ITO serve well p-contact. Interestingly, 75 nm 25 nm, average contact resistivity values show decreasing trend 390 mΩ cm2 114 cm2. With applying 25-nm-thick front n-contact, rear use obtained side efficiencies above 22% cells. This represents 67% reduction respect reference 75-nm-thick on sides.